bdv67/a/b/c silicon npn darlington power transistor ? 2014 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 2 revised 01/2014 description ? collector current - i c = 16a ? collector - emitter saturation voltage - : v ce(sat)= 2.0v(max.)@ i c = 10a ? complement to type bdv66/a/b/c applications ? designed for audio output stages and general a mplifier and switching applications absolute maximum ratings(t a =25 symbol parameter value unit v cbo collector - base voltage bdv67 80 v bdv67a 100 bdv67b 120 bdv67c 140 v ceo collector - emitter voltage bdv67 60 v bdv67a 80 bdv67b 100 bdv67c 120 v ebo emitter - base voltage 5 v i c collector current - continuous 16 a i cm collector current - peak 20 a i b base current - continuous 0.5 a p c collector power dissipation @ t c =25 175 w t j junction temperature 150 tstg storage temperature range - 65~150 thermal characteristics symbol parameter max unit rth j - c thermal resistance, junction to case 0.625 /w pnp bdv66 bdv66a bdv66b bdv66c npn bdv67 bdv67a bdv67b bdv67c 16 ampere darlington complementary silicon power transistors 60 - 100 volts 125 watts pin 1. base 2. collector 3. emitter dim millimeters min max a b c d e f g h i j k l m n o p 20.63 15.38 1.90 5.10 14.81 11.72 4.20 1.82 2.92 0.89 5.26 18.50 4.68 2.40 3.25 0.55 22.38 16.20 2.70 6.10 15.22 12.84 4.50 2.46 3.23 1.53 5.66 21.50 5.36 2.80 3.65 0.70 to 247 (3)
bdv67/a/b/c silicon npn darlington power transistor ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 2 of 2 revised 06/2013 electrical characteristics t c =25 symbol parameter conditions min typ. max unit v ceo(sus) collector - emitter sustaining voltage bdv67 i c = 100ma ;i b = 0 60 v bdv67a 80 bdv67b 100 bdv67c 120 v ce(sat) collector - emitter saturation voltage i c = 10a; i b = 40ma 2 v v be(on) base - emitter on voltage i c = 10a ; v ce = 3v 2.5 v i ceo collector cutoff current v ce = 1/2vceomax; i b = 0 1 ma i cbo collector cutoff current bdv67 v cb = 40v;i e = 0; t j = 150 5 ma bdv67a v cb = 50v;i e = 0; t j = 150 bdv67b v cb = 60v;i e = 0; t j = 150 bdv67c v cb = 70v;i e = 0; t j = 150 i cbo collector cutoff current v cb = v cbomax ; i e = 0 1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 5 ma h fe dc current gain i c = 10a ; v ce = 3v 1000 c ob output capacitance i e = 0 ; v cb = 10v; f test = 1mhz 300 pf switching times t on turn - on time i c = 10a; i b1 = - i b2 = 40ma; v cc = 12v 1 s t off turn - off time 3 .5 s
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